All MOSFET. IRFD220 Datasheet

 

IRFD220 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFD220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14(max) nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: HD-1

 IRFD220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFD220 Datasheet (PDF)

 ..1. Size:175K  international rectifier
 irfd220.pdf

IRFD220 IRFD220

 ..2. Size:1890K  vishay
 irfd220 sihfd220.pdf

IRFD220 IRFD220

IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

 ..3. Size:1891K  vishay
 irfd220pbf sihfd220.pdf

IRFD220 IRFD220

IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

 8.1. Size:927K  international rectifier
 irfd224pbf.pdf

IRFD220 IRFD220

PD- 95923IRFD224PbF Lead-Free10/29/04Document Number: 91132 www.vishay.com1IRFD224PbFDocument Number: 91132 www.vishay.com2IRFD224PbFDocument Number: 91132 www.vishay.com3IRFD224PbFDocument Number: 91132 www.vishay.com4IRFD224PbFDocument Number: 91132 www.vishay.com5IRFD224PbFDocument Number: 91132 www.vishay.com6IRFD224PbFDocument Number: 91

 8.2. Size:308K  international rectifier
 irfd224.pdf

IRFD220 IRFD220

PD -9.1272IRFD224HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 1.1Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.63ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

 8.3. Size:1238K  vishay
 irfd224 sihfd224.pdf

IRFD220 IRFD220

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co

 8.4. Size:1237K  vishay
 irfd224pbf sihfd224.pdf

IRFD220 IRFD220

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co

Datasheet: IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 , NCEP15T14 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 .

 

 
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