IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen

PD- 95923IRFD224PbF Lead-Free10/29/04Document Number: 91132 www.vishay.com1IRFD224PbFDocument Number: 91132 www.vishay.com2IRFD224PbFDocument Number: 91132 www.vishay.com3IRFD224PbFDocument Number: 91132 www.vishay.com4IRFD224PbFDocument Number: 91132 www.vishay.com5IRFD224PbFDocument Number: 91132 www.vishay.com6IRFD224PbFDocument Number: 91

PD -9.1272IRFD224HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 1.1Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.63ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co

IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co