All MOSFET. AOI2610 Datasheet

 

AOI2610 Datasheet and Replacement


   Type Designator: AOI2610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: TO-251A
 
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AOI2610 Datasheet (PDF)

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AOI2610

AOD2610/AOI261060V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

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AOI2610

isc N-Channel MOSFET Transistor AOI2610FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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AOI2610

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.2. Size:411K  aosemi
 aoi2610e.pdf pdf_icon

AOI2610

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOD4158P , AOE6930 , AOE6932 , AOE6936 , AOH3254 , AOI294A , AOI296A , AOI2606 , 13N50 , AOI2610E , AOI2614 , AOI66406 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 .

History: SI7850DP | 2SK3116B | ECH8690

Keywords - AOI2610 MOSFET datasheet

 AOI2610 cross reference
 AOI2610 equivalent finder
 AOI2610 lookup
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