AOI2610 Datasheet. Specs and Replacement
Type Designator: AOI2610 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 177 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-251A
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AOI2610 substitution
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AOI2610 datasheet
aoi2610.pdf
AOD2610/AOI2610 60V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aoi2610.pdf
isc N-Channel MOSFET Transistor AOI2610 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
aod2610e aoi2610e aoy2610e.pdf
AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aoi2610e.pdf
AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD4158P, AOE6930, AOE6932, AOE6936, AOH3254, AOI294A, AOI296A, AOI2606, TK10A60D, AOI2610E, AOI2614, AOI66406, AOK60N30L, AOL1404G, AOL1454G, AON2392, AON3414
Keywords - AOI2610 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: APJ14N65D | IPI80P03P4L-07 | 2SK4057 | VBE1202
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