AOI2610 Datasheet and Replacement
Type Designator: AOI2610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 177 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-251A
AOI2610 substitution
AOI2610 Datasheet (PDF)
aoi2610.pdf

AOD2610/AOI261060V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
aoi2610.pdf

isc N-Channel MOSFET Transistor AOI2610FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aod2610e aoi2610e aoy2610e.pdf

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aoi2610e.pdf

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOD4158P , AOE6930 , AOE6932 , AOE6936 , AOH3254 , AOI294A , AOI296A , AOI2606 , 13N50 , AOI2610E , AOI2614 , AOI66406 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 .
History: 2SJ240 | 1N65L-T60-K | APT5014BLLG | 2SK1023-01 | GSM9995S | IRFS440A | HTJ350N03
Keywords - AOI2610 MOSFET datasheet
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History: 2SJ240 | 1N65L-T60-K | APT5014BLLG | 2SK1023-01 | GSM9995S | IRFS440A | HTJ350N03



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