AOI2610E Datasheet. Specs and Replacement

Type Designator: AOI2610E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-251A

AOI2610E substitution

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AOI2610E datasheet

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AOI2610E

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AOI2610E

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AOI2610E

isc N-Channel MOSFET Transistor AOI2610E FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

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AOI2610E

AOD2610/AOI2610 60V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOE6930, AOE6932, AOE6936, AOH3254, AOI294A, AOI296A, AOI2606, AOI2610, RFP50N06, AOI2614, AOI66406, AOK60N30L, AOL1404G, AOL1454G, AON2392, AON3414, AON3820

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