All MOSFET. AOI2610E Datasheet

 

AOI2610E MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOI2610E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-251A

 AOI2610E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI2610E Datasheet (PDF)

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 aod2610e aoi2610e aoy2610e.pdf

AOI2610E AOI2610E

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:411K  aosemi
 aoi2610e.pdf

AOI2610E AOI2610E

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..3. Size:273K  inchange semiconductor
 aoi2610e.pdf

AOI2610E AOI2610E

isc N-Channel MOSFET Transistor AOI2610EFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:267K  aosemi
 aoi2610.pdf

AOI2610E AOI2610E

AOD2610/AOI261060V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:274K  inchange semiconductor
 aoi2610.pdf

AOI2610E AOI2610E

isc N-Channel MOSFET Transistor AOI2610FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:273K  inchange semiconductor
 aoi2614.pdf

AOI2610E AOI2610E

isc N-Channel MOSFET Transistor AOI2614FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFF120 | KP103M

 

 
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