AOK60N30L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOK60N30L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 658
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 88
nC
trⓘ - Rise Time: 320
nS
Cossⓘ -
Output Capacitance: 593
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056
Ohm
Package:
TO-247
AOK60N30L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOK60N30L
Datasheet (PDF)
..1. Size:362K aosemi
aok60n30l.pdf 
AOK60N30L300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30L is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
..2. Size:378K inchange semiconductor
aok60n30l.pdf
isc N-Channel MOSFET Transistor AOK60N30LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.056(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
6.1. Size:315K aosemi
aok60n30.pdf
AOK60N30300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
9.1. Size:590K aosemi
aok60b65h1.pdf
AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo
9.2. Size:602K aosemi
aok60b65hq3.pdf
AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic
9.3. Size:1105K aosemi
aok60b65h2al.pdf
AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn
9.4. Size:725K aosemi
aok60b60d1.pdf
AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
9.5. Size:1294K aosemi
aok60b65m3.pdf
AOK60B65M3TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci
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