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AOK60N30L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOK60N30L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 658 W
   Предельно допустимое напряжение сток-исток |Uds|: 300 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.1 V
   Максимально допустимый постоянный ток стока |Id|: 60 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 88 nC
   Время нарастания (tr): 320 ns
   Выходная емкость (Cd): 593 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.056 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для AOK60N30L

 

 

AOK60N30L Datasheet (PDF)

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aok60n30l.pdf

AOK60N30L
AOK60N30L

AOK60N30L300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30L is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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aok60n30l.pdf

AOK60N30L
AOK60N30L

isc N-Channel MOSFET Transistor AOK60N30LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.056(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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aok60n30.pdf

AOK60N30L
AOK60N30L

AOK60N30300V,60A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK60N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 60Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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aok60b60d1.pdf

AOK60N30L
AOK60N30L

AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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