IRFD420 Spec and Replacement
Type Designator: IRFD420
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: HD-1
IRFD420 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD420 Specs
irfd420.pdf
PD- 95929 IRFD420PbF Lead-Free 10/28/04 Document Number 91135 www.vishay.com 1 IRFD420PbF Document Number 91135 www.vishay.com 2 IRFD420PbF Document Number 91135 www.vishay.com 3 IRFD420PbF Document Number 91135 www.vishay.com 4 IRFD420PbF Document Number 91135 www.vishay.com 5 IRFD420PbF Document Number 91135 www.vishay.com 6 IRFD420PbF Document Number 91... See More ⇒
irfd420 sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements ... See More ⇒
irfd420pbf sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements ... See More ⇒
Detailed specifications: IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRF730 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRFDC20 , IRFE024 .
Keywords - IRFD420 MOSFET specs
IRFD420 cross reference
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