IRFD420 Datasheet. Specs and Replacement
Type Designator: IRFD420 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: HD-1
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IRFD420 substitution
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IRFD420 datasheet
irfd420.pdf
PD- 95929 IRFD420PbF Lead-Free 10/28/04 Document Number 91135 www.vishay.com 1 IRFD420PbF Document Number 91135 www.vishay.com 2 IRFD420PbF Document Number 91135 www.vishay.com 3 IRFD420PbF Document Number 91135 www.vishay.com 4 IRFD420PbF Document Number 91135 www.vishay.com 5 IRFD420PbF Document Number 91135 www.vishay.com 6 IRFD420PbF Document Number 91... See More ⇒
irfd420 sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements ... See More ⇒
irfd420pbf sihfd420.pdf
IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 3.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 24 COMPLIANT End Stackable Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease of Paralleling Configuration Single Simple Drive Requirements ... See More ⇒
Detailed specifications: IRFD110, IRFD120, IRFD210, IRFD214, IRFD220, IRFD224, IRFD310, IRFD320, IRF730, IRFD9014, IRFD9024, IRFD9110, IRFD9120, IRFD9210, IRFD9220, IRFDC20, IRFE024
Keywords - IRFD420 MOSFET specs
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