All MOSFET. AON6284A Datasheet

 

AON6284A Datasheet and Replacement


   Type Designator: AON6284A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6
 

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AON6284A Datasheet (PDF)

 ..1. Size:432K  aosemi
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AON6284A

AON6284ATM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

 7.1. Size:271K  aosemi
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AON6284A

AON628480V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6284 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 78Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.1. Size:270K  aosemi
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AON6284A

AON628280V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6282 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.2. Size:295K  aosemi
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AON6284A

AON628080V N-Channel MOSFETGeneral Description Product SummaryVDS80VThe AON6280 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

Datasheet: AON6224A , AON6226 , AON6232A , AON6262E , AON6264E , AON6266E , AON6268 , AON6276 , MMD60R360PRH , AON6312 , AON6314 , AON6354 , AON6358 , AON6360 , AON6362 , AON6366E , AON6368 .

History: OSG60R670FF | NVD4806N | PB544JU | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H

Keywords - AON6284A MOSFET datasheet

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