AON6360 Datasheet. Specs and Replacement

Type Designator: AON6360

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DFN5X6

AON6360 substitution

- MOSFET ⓘ Cross-Reference Search

 

AON6360 datasheet

 ..1. Size:268K  aosemi
 aon6360.pdf pdf_icon

AON6360

AON6360 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:459K  aosemi
 aon6362.pdf pdf_icon

AON6360

AON6362 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:265K  aosemi
 aon6368.pdf pdf_icon

AON6360

AON6368 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:362K  aosemi
 aon6366e.pdf pdf_icon

AON6360

AON6366E 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

SHOW MORE

Detailed specifications: AON6266E, AON6268, AON6276, AON6284A, AON6312, AON6314, AON6354, AON6358, IRFP064N, AON6362, AON6366E, AON6368, AON6370, AON6372, AON6380, AON6382, AON6384

Keywords - AON6360 MOSFET specs

 AON6360 cross reference

 AON6360 equivalent finder

 AON6360 pdf lookup

 AON6360 substitution

 AON6360 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs