AON6380 Datasheet: MOSFET, N-Ch, 30V, 24A. Full specification with pinout and replacement list

AON6380 Datasheet. Specs and Replacement

The AON6380 is a high-performance N-channel power MOSFET designed for efficient switching and power management in compact electronic systems. Built on advanced trench technology, it offers low RDS(on), fast switching behavior, and low gate charge, enabling high efficiency in DC-DC converters, load switches, battery-powered applications. The device is optimized for logic-level gate drive and surface-mount assembly. Advantages: low conduction losses, good thermal performance in small packages, fast transient response, suitability for high-frequency operation. Disadvantages: limited voltage margin compared to higher-voltage MOSFETs, sensitivity to ESD, performance degradation if thermal dissipation is poorly managed.

Type Designator: AON6380 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: DFN5X6

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AON6380 datasheet

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AON6380 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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