AON6528
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6528
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 12.7
nS
Cossⓘ -
Output Capacitance: 441
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063
Ohm
Package:
DFN5X6
AON6528
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6528
Datasheet (PDF)
..1. Size:358K aosemi
aon6528.pdf
AON652830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:248K aosemi
aon6520.pdf
AON652030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6520 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.2. Size:305K aosemi
aon6526.pdf
AON652630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:456K aosemi
aon6524.pdf
AON652430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:280K aosemi
aon6522.pdf
AON652225V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 25V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: FMM50-025TF
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