AON6560 Datasheet. Specs and Replacement

Type Designator: AON6560

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38.5 nS

Cossⓘ - Output Capacitance: 3400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00068 Ohm

Package: DFN5X6

AON6560 substitution

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AON6560 datasheet

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AON6560

AON6560 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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aon6566.pdf pdf_icon

AON6560

AON6566 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:282K  1
aon6512.pdf pdf_icon

AON6560

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:204K  1
aon6508.pdf pdf_icon

AON6560

AON6508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6370, AON6372, AON6380, AON6382, AON6384, AON6406, AON6528, AON6548, IRFZ44, AON6590, AON6661, AON6667, AON6734, AON6764, AON6792, AON6794, AON6796

Keywords - AON6560 MOSFET specs

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