All MOSFET. AON6794 Datasheet

 

AON6794 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6794
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: DFN5X6

 AON6794 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6794 Datasheet (PDF)

 ..1. Size:243K  aosemi
 aon6794.pdf

AON6794 AON6794

AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:262K  1
 aon6790.pdf

AON6794 AON6794

AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.2. Size:331K  aosemi
 aon6792.pdf

AON6794 AON6794

AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:345K  aosemi
 aon6796.pdf

AON6794 AON6794

AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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