All MOSFET. AON6794 Datasheet

 

AON6794 Datasheet and Replacement


   Type Designator: AON6794
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: DFN5X6
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AON6794 Datasheet (PDF)

 ..1. Size:243K  aosemi
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AON6794

AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:262K  1
 aon6790.pdf pdf_icon

AON6794

AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.2. Size:331K  aosemi
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AON6794

AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:345K  aosemi
 aon6796.pdf pdf_icon

AON6794

AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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History: BL10N70-A | CED05N8

Keywords - AON6794 MOSFET datasheet

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