AON6998 Datasheet. Specs and Replacement

Type Designator: AON6998

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN5X6D

AON6998 substitution

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AON6998 datasheet

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AON6998

AON6998 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6998

AON6996 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6998

AON6992 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:349K  aosemi
 aon6994.pdf pdf_icon

AON6998

AON6994 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AON6792, AON6794, AON6796, AON6982, AON6984, AON6992, AON6994, AON6996, P55NF06, AON7140, AON7230, AON7232, AON7246E, AON7262E, AON7264E, AON7318, AON7380

Keywords - AON6998 MOSFET specs

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