AONE36132 Datasheet. Specs and Replacement

Type Designator: AONE36132

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: DFN3.3X3.3AEP2

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AONE36132 datasheet

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AONE36132

AONE36132 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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AONE36132

AONE36182 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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AONE36132

AONE38132 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 60A 134A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON7318, AON7380, AON7404G, AON7422G, AON7442, AON7518, AON7566, AON7568, IRFP260, AONE36182, AONR21307, AONR21357, AONR32314, AONR36366, AONR36368, AONR62818, AONR66406

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