IRFD9210 Datasheet: MOSFET, P-Ch, 200V, 0.4A. Full specification with pinout and replacement list

IRFD9210 Datasheet. Specs and Replacement

Type Designator: IRFD9210 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 8.9 max nC

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: HD-1

📄📄 Copy

IRFD9210 substitution

- MOSFET ⓘ Cross-Reference Search

IRFD9210 datasheet

..1. Size:1772K international rectifier
irfd9210pbf.pdf pdf_icon

PD- 95934 IRFD9210PbF Lead-Free 10/28/04 Document Number 91140 www.vishay.com 1 IRFD9210PbF Document Number 91140 www.vishay.com 2 IRFD9210PbF Document Number 91140 www.vishay.com 3 IRFD9210PbF Document Number 91140 www.vishay.com 4 IRFD9210PbF Document Number 91140 www.vishay.com 5 IRFD9210PbF Document Number 91140 www.vishay.com 6 IRFD9210PbF Peak Diode R... See More ⇒

..2. Size:171K international rectifier
irfd9210.pdf pdf_icon

... See More ⇒

..3. Size:1552K vishay
irfd9210 sihfd9210.pdf pdf_icon

IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S ... See More ⇒

..4. Size:1553K vishay
irfd9210pbf sihfd9210.pdf pdf_icon