IRFD9210 Spec and Replacement
Type Designator: IRFD9210
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: HD-1
IRFD9210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD9210 Specs
irfd9210pbf.pdf
PD- 95934 IRFD9210PbF Lead-Free 10/28/04 Document Number 91140 www.vishay.com 1 IRFD9210PbF Document Number 91140 www.vishay.com 2 IRFD9210PbF Document Number 91140 www.vishay.com 3 IRFD9210PbF Document Number 91140 www.vishay.com 4 IRFD9210PbF Document Number 91140 www.vishay.com 5 IRFD9210PbF Document Number 91140 www.vishay.com 6 IRFD9210PbF Peak Diode R... See More ⇒
irfd9210 sihfd9210.pdf
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S ... See More ⇒
irfd9210pbf sihfd9210.pdf
IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S ... See More ⇒
Detailed specifications: IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , 20N60 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 .
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