IRFD9210
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFD9210
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 0.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.9(max)
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 54
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package: HD-1
IRFD9210
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD9210
Datasheet (PDF)
..1. Size:1772K international rectifier
irfd9210pbf.pdf
PD- 95934IRFD9210PbF Lead-Free10/28/04Document Number: 91140 www.vishay.com1IRFD9210PbFDocument Number: 91140 www.vishay.com2IRFD9210PbFDocument Number: 91140 www.vishay.com3IRFD9210PbFDocument Number: 91140 www.vishay.com4IRFD9210PbFDocument Number: 91140 www.vishay.com5IRFD9210PbFDocument Number: 91140 www.vishay.com6IRFD9210PbFPeak Diode R
..3. Size:1552K vishay
irfd9210 sihfd9210.pdf
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
..4. Size:1553K vishay
irfd9210pbf sihfd9210.pdf
IRFD9210, SiHFD9210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* For Automatic InsertionQg (Max.) (nC) 8.9 COMPLIANT End StackableQgs (nC) 2.1 P-ChannelQgd (nC) 3.9 Fast SwitchingConfiguration Single Ease of ParallelingS
8.1. Size:1774K international rectifier
irfd9220pbf.pdf
PD- 95918IRFD9220PbF Lead-Free10/28/04Document Number: 91141 www.vishay.com1IRFD9220PbFDocument Number: 91141 www.vishay.com2IRFD9220PbFDocument Number: 91141 www.vishay.com3IRFD9220PbFDocument Number: 91141 www.vishay.com4IRFD9220PbFDocument Number: 91141 www.vishay.com5IRFD9220PbFDocument Number: 91141 www.vishay.com6IRFD9220PbFPeak Diode R
8.3. Size:1675K vishay
irfd9220pbf sihfd9220.pdf
IRFD9220, SiHFD9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of Para
8.4. Size:1658K vishay
irfd9220 sihfd9220.pdf
IRFD9220, SiHFD9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of ParallelingS
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