AONR21307 Datasheet and Replacement
Type Designator: AONR21307
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
tr ⓘ - Rise Time: 13.3 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DFN3X3
AONR21307 substitution
AONR21307 Datasheet (PDF)
aonr21307.pdf

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aonr21305c.pdf

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AON7404G , AON7422G , AON7442 , AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AON7410 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 .
Keywords - AONR21307 MOSFET datasheet
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History: BTS244Z | TK31E60W



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