AONR21357 Datasheet and Replacement
Type Designator: AONR21357
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 34 A
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: DFN3X3
AONR21357 substitution
AONR21357 Datasheet (PDF)
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aonr21307.pdf

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AON7422G , AON7442 , AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AONR21307 , IRF9540N , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 .
History: SML25SCM650N2B | IPP16CN10N
Keywords - AONR21357 MOSFET datasheet
AONR21357 cross reference
AONR21357 equivalent finder
AONR21357 lookup
AONR21357 substitution
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History: SML25SCM650N2B | IPP16CN10N



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