AONR32314 Datasheet. Specs and Replacement

Type Designator: AONR32314

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm

Package: DFN3X3

AONR32314 substitution

- MOSFET ⓘ Cross-Reference Search

 

AONR32314 datasheet

 ..1. Size:348K  aosemi
aonr32314.pdf pdf_icon

AONR32314

AONR32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:354K  aosemi
aonr32318.pdf pdf_icon

AONR32314

AONR32318 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:533K  1
aonr32340c.pdf pdf_icon

AONR32314

AONR32340C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:369K  aosemi
aonr32320c.pdf pdf_icon

AONR32314

AONR32320C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON7442, AON7518, AON7566, AON7568, AONE36132, AONE36182, AONR21307, AONR21357, K4145, AONR36366, AONR36368, AONR62818, AONR66406, AONS21307, AONS21357, AONS32306, AONS32314

Keywords - AONR32314 MOSFET specs

 AONR32314 cross reference

 AONR32314 equivalent finder

 AONR32314 pdf lookup

 AONR32314 substitution

 AONR32314 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility