All MOSFET. AONR32314 Datasheet

 

AONR32314 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR32314
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: DFN3X3

 AONR32314 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR32314 Datasheet (PDF)

 ..1. Size:348K  aosemi
 aonr32314.pdf

AONR32314 AONR32314

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)

 6.1. Size:354K  aosemi
 aonr32318.pdf

AONR32314 AONR32314

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)

 7.1. Size:533K  1
 aonr32340c.pdf

AONR32314 AONR32314

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:369K  aosemi
 aonr32320c.pdf

AONR32314 AONR32314

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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