AONR32314 Datasheet and Replacement
Type Designator: AONR32314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: DFN3X3
AONR32314 substitution
AONR32314 Datasheet (PDF)
aonr32314.pdf

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)
aonr32318.pdf

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)
aonr32340c.pdf

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr32320c.pdf

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON7442 , AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AONR21307 , AONR21357 , IRFB3607 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 .
History: 2SJ601 | SI2303CDS | BL3N150-P | JCS18N25VC | IXTM4N100A | NCEAP15ND10AG | IXFN82N60Q3
Keywords - AONR32314 MOSFET datasheet
AONR32314 cross reference
AONR32314 equivalent finder
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AONR32314 substitution
AONR32314 replacement
History: 2SJ601 | SI2303CDS | BL3N150-P | JCS18N25VC | IXTM4N100A | NCEAP15ND10AG | IXFN82N60Q3



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