All MOSFET. AONR32314 Datasheet

 

AONR32314 Datasheet and Replacement


   Type Designator: AONR32314
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
   Package: DFN3X3
 

 AONR32314 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AONR32314 Datasheet (PDF)

 ..1. Size:348K  aosemi
 aonr32314.pdf pdf_icon

AONR32314

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)

 6.1. Size:354K  aosemi
 aonr32318.pdf pdf_icon

AONR32314

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)

 7.1. Size:533K  1
 aonr32340c.pdf pdf_icon

AONR32314

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:369K  aosemi
 aonr32320c.pdf pdf_icon

AONR32314

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

SHOW MORE

Datasheet: AON7442 , AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AONR21307 , AONR21357 , IRFB3607 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 .

History: WM03DP50A | AONP36320 | JCS2N60CB

Keywords - AONR32314 MOSFET datasheet

 AONR32314 cross reference
 AONR32314 equivalent finder
 AONR32314 lookup
 AONR32314 substitution
 AONR32314 replacement

 

 
Back to Top

 


 
.