AONR36366 Datasheet and Replacement
Type Designator: AONR36366
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DFN3X3
AONR36366 substitution
AONR36366 Datasheet (PDF)
aonr36366.pdf

AONR3636630V N-Channel MOSFETGeneral Description Product Summary VDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36368.pdf

AONR3636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36321.pdf

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36326c.pdf

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AONR21307 , AONR21357 , AONR32314 , AO4407 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 .
History: IPB120N10S4-03 | DMN2990UDJ | WM02DN70A | TPCP8301 | 2SK3340W | SWF20N65K | SRM7N65DTR-E1
Keywords - AONR36366 MOSFET datasheet
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History: IPB120N10S4-03 | DMN2990UDJ | WM02DN70A | TPCP8301 | 2SK3340W | SWF20N65K | SRM7N65DTR-E1



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