All MOSFET. AONR36366 Datasheet

 

AONR36366 Datasheet and Replacement


   Type Designator: AONR36366
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN3X3
 

 AONR36366 substitution

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AONR36366 Datasheet (PDF)

 ..1. Size:431K  aosemi
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AONR36366

AONR3636630V N-Channel MOSFETGeneral Description Product Summary VDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:361K  aosemi
 aonr36368.pdf pdf_icon

AONR36366

AONR3636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:371K  aosemi
 aonr36321.pdf pdf_icon

AONR36366

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36366

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AON7518 , AON7566 , AON7568 , AONE36132 , AONE36182 , AONR21307 , AONR21357 , AONR32314 , TK10A60D , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 .

History: PJS6415

Keywords - AONR36366 MOSFET datasheet

 AONR36366 cross reference
 AONR36366 equivalent finder
 AONR36366 lookup
 AONR36366 substitution
 AONR36366 replacement

 

 
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