AONR36366 Datasheet. Specs and Replacement

Type Designator: AONR36366

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN3X3

AONR36366 substitution

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AONR36366 datasheet

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AONR36366

AONR36366 30V N-Channel MOSFET General Description Product Summary VDS Trench Power LV MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR36366

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AONR36366

AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR36366

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AON7518, AON7566, AON7568, AONE36132, AONE36182, AONR21307, AONR21357, AONR32314, 13N50, AONR36368, AONR62818, AONR66406, AONS21307, AONS21357, AONS32306, AONS32314, AONS62602

Keywords - AONR36366 MOSFET specs

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