All MOSFET. AONR66406 Datasheet

 

AONR66406 Datasheet and Replacement


   Type Designator: AONR66406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: DFN3X3EP
 

 AONR66406 substitution

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AONR66406 Datasheet (PDF)

 ..1. Size:332K  aosemi
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AONR66406

AONR66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:483K  aosemi
 aonr66620.pdf pdf_icon

AONR66406

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 8.2. Size:442K  aosemi
 aonr66821.pdf pdf_icon

AONR66406

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 8.3. Size:806K  aosemi
 aonr66922.pdf pdf_icon

AONR66406

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)

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Datasheet: AONE36132 , AONE36182 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , 4435 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 .

History: IXFX44N80P | 2SK3727-01 | 2SK3812-ZP

Keywords - AONR66406 MOSFET datasheet

 AONR66406 cross reference
 AONR66406 equivalent finder
 AONR66406 lookup
 AONR66406 substitution
 AONR66406 replacement

 

 
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