AONR66406 Datasheet: MOSFET, N-Ch, 40V, 30A. Full specification with pinout and replacement list

AONR66406 Datasheet. Specs and Replacement

Type Designator: AONR66406

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 20 V

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: DFN3X3EP

AONR66406 substitution

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AONR66406 datasheet

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AONR66406 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66620 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66821 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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AONR66922 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒