AONR66406 Datasheet and Replacement
Type Designator: AONR66406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
Package: DFN3X3EP
AONR66406 substitution
AONR66406 Datasheet (PDF)
aonr66406.pdf

AONR66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aonr66620.pdf

AONR66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aonr66821.pdf

AONR66821TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V Trench Power AlphaSGTTM technology 80V ID (at VGS=10V) 93A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
aonr66922.pdf

AONR66922TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: AONE36132 , AONE36182 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , 4435 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 .
History: GSM3400S | IXFH320N10T2
Keywords - AONR66406 MOSFET datasheet
AONR66406 cross reference
AONR66406 equivalent finder
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History: GSM3400S | IXFH320N10T2



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