All MOSFET. AONS21357 Datasheet

 

AONS21357 Datasheet and Replacement


   Type Designator: AONS21357
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: DFN5X6
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AONS21357 Datasheet (PDF)

 ..1. Size:387K  1
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AONS21357

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)

 ..2. Size:387K  aosemi
 aons21357.pdf pdf_icon

AONS21357

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:336K  aosemi
 aons21307.pdf pdf_icon

AONS21357

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:731K  aosemi
 aons21321.pdf pdf_icon

AONS21357

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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History: R6015ANZ | 2SK1571

Keywords - AONS21357 MOSFET datasheet

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