All MOSFET. AONS32306 Datasheet

 

AONS32306 Datasheet and Replacement


   Type Designator: AONS32306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6
 

 AONS32306 substitution

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AONS32306 Datasheet (PDF)

 ..1. Size:387K  aosemi
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AONS32306

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)

 6.1. Size:693K  aosemi
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AONS32306

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:403K  aosemi
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AONS32306

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

 6.3. Size:754K  aosemi
aons32304.pdf pdf_icon

AONS32306

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , IRLZ44N , AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 .

History: 2SK3914-01

Keywords - AONS32306 MOSFET datasheet

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