IRFD9220 Datasheet and Replacement
Type Designator: IRFD9220
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: HD-1
IRFD9220 substitution
IRFD9220 Datasheet (PDF)
irfd9220pbf.pdf

PD- 95918IRFD9220PbF Lead-Free10/28/04Document Number: 91141 www.vishay.com1IRFD9220PbFDocument Number: 91141 www.vishay.com2IRFD9220PbFDocument Number: 91141 www.vishay.com3IRFD9220PbFDocument Number: 91141 www.vishay.com4IRFD9220PbFDocument Number: 91141 www.vishay.com5IRFD9220PbFDocument Number: 91141 www.vishay.com6IRFD9220PbFPeak Diode R
irfd9220pbf sihfd9220.pdf

IRFD9220, SiHFD9220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of Para
irfd9220 sihfd9220.pdf

IRFD9220, SiHFD9220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.5RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 15 End StackableQgs (nC) 3.2 P-ChannelQgd (nC) 8.4 Fast SwitchingConfiguration Single Ease of ParallelingS
Datasheet: IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRF540N , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 , IRFE230 .
History: CS4N65A4TDY
Keywords - IRFD9220 MOSFET datasheet
 IRFD9220 cross reference
 IRFD9220 equivalent finder
 IRFD9220 lookup
 IRFD9220 substitution
 IRFD9220 replacement
History: CS4N65A4TDY
 
 
 
 
 
 
 
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