IRFD9220 Spec and Replacement
Type Designator: IRFD9220
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: HD-1
IRFD9220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD9220 Specs
irfd9220pbf.pdf
PD- 95918 IRFD9220PbF Lead-Free 10/28/04 Document Number 91141 www.vishay.com 1 IRFD9220PbF Document Number 91141 www.vishay.com 2 IRFD9220PbF Document Number 91141 www.vishay.com 3 IRFD9220PbF Document Number 91141 www.vishay.com 4 IRFD9220PbF Document Number 91141 www.vishay.com 5 IRFD9220PbF Document Number 91141 www.vishay.com 6 IRFD9220PbF Peak Diode R... See More ⇒
irfd9220pbf sihfd9220.pdf
IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Para... See More ⇒
irfd9220 sihfd9220.pdf
IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 15 End Stackable Qgs (nC) 3.2 P-Channel Qgd (nC) 8.4 Fast Switching Configuration Single Ease of Paralleling S ... See More ⇒
Detailed specifications: IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRF540N , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 , IRFE230 .
Keywords - IRFD9220 MOSFET specs
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