AONS32314 Datasheet. Specs and Replacement

Type Designator: AONS32314

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm

Package: DFN5X6

AONS32314 substitution

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AONS32314 datasheet

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AONS32314

AONS32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

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 aons32310.pdf pdf_icon

AONS32314

AONS32310 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:693K  aosemi
 aons32302.pdf pdf_icon

AONS32314

AONS32302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:387K  aosemi
 aons32306.pdf pdf_icon

AONS32314

AONS32306 30V N-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR32314, AONR36366, AONR36368, AONR62818, AONR66406, AONS21307, AONS21357, AONS32306, IRF530, AONS62602, AONS62614, AONS62618, AONS62922, AONS66402, AONS66406, AONS66916, AOSD62666E

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