AONS32314 Datasheet and Replacement
Type Designator: AONS32314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: DFN5X6
AONS32314 substitution
AONS32314 Datasheet (PDF)
aons32314.pdf

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)
aons32310.pdf

AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
aons32302.pdf

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)
aons32306.pdf

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)
Datasheet: AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AO4407 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E .
History: CHM3120PAGP | HM2809DR | 17P10G-TF1-T | SVF4N65CAFJH | SPP15N60C3 | CHM21A2PAGP | ELM14418AA
Keywords - AONS32314 MOSFET datasheet
AONS32314 cross reference
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History: CHM3120PAGP | HM2809DR | 17P10G-TF1-T | SVF4N65CAFJH | SPP15N60C3 | CHM21A2PAGP | ELM14418AA



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