AONS62614 Datasheet and Replacement
Type Designator: AONS62614
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 100 A
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: DFN5X6
- MOSFET Cross-Reference Search
AONS62614 Datasheet (PDF)
aons62614.pdf

AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62614t.pdf

AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62618.pdf

AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons62606.pdf

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AONR36368 , AONR62818 , AONR66406 , AONS21307 , AONS21357 , AONS32306 , AONS32314 , AONS62602 , STP80NF70 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 .
History: 2N3687 | ELM13401CA | 12N65KG-TF1-T | FCD5N60TMWS | R5016ANJ | DH150N12B | BSB280N15NZ3G
Keywords - AONS62614 MOSFET datasheet
AONS62614 cross reference
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History: 2N3687 | ELM13401CA | 12N65KG-TF1-T | FCD5N60TMWS | R5016ANJ | DH150N12B | BSB280N15NZ3G



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