AONS62614 MOSFET. Datasheet pdf. Equivalent
Type Designator: AONS62614
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 100 A
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: DFN5X6
AONS62614 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AONS62614 Datasheet (PDF)
aons62614.pdf
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AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62618.pdf
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AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons62602.pdf
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AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62922.pdf
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AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)
aons62922.pdf
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AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .