All MOSFET. AONS62922 Datasheet

 

AONS62922 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS62922
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6

 AONS62922 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS62922 Datasheet (PDF)

 ..1. Size:336K  1
 aons62922.pdf

AONS62922 AONS62922

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 ..2. Size:336K  aosemi
 aons62922.pdf

AONS62922 AONS62922

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:352K  aosemi
 aons62920.pdf

AONS62922 AONS62922

AONS62920TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

 8.1. Size:364K  aosemi
 aons62606.pdf

AONS62922 AONS62922

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.2. Size:329K  aosemi
 aons62618.pdf

AONS62922 AONS62922

AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:337K  aosemi
 aons62602.pdf

AONS62922 AONS62922

AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.4. Size:362K  aosemi
 aons62614t.pdf

AONS62922 AONS62922

AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.5. Size:335K  aosemi
 aons62614.pdf

AONS62922 AONS62922

AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.6. Size:493K  aosemi
 aons62530.pdf

AONS62922 AONS62922

AONS62530TM150V N-Channel MOSGeneral Description Product SummaryVDS150V Latest Trench Power MOS (MOS MV) technology Low Gate Charge ID (at VGS=10V) 19A Optimized for fast-switching applications RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top