All MOSFET. AONS62922 Datasheet

 

AONS62922 Datasheet and Replacement


   Type Designator: AONS62922
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6
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AONS62922 Datasheet (PDF)

 ..1. Size:336K  1
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AONS62922

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 ..2. Size:336K  aosemi
 aons62922.pdf pdf_icon

AONS62922

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:352K  aosemi
 aons62920.pdf pdf_icon

AONS62922

AONS62920TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

 8.1. Size:364K  aosemi
 aons62606.pdf pdf_icon

AONS62922

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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History: 2SK3272-01L | EC3A03B | 2N6796U | GSM4936S | 2SK1064 | IRLH6224PBF | ATM2N65TE

Keywords - AONS62922 MOSFET datasheet

 AONS62922 cross reference
 AONS62922 equivalent finder
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