IRFDC20 Spec and Replacement
Type Designator: IRFDC20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: HD-1
IRFDC20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFDC20 Specs
irfdc20.pdf
PD- 95914 IRFDC20PbF Lead-Free 10/28/04 Document Number 91142 www.vishay.com 1 IRFDC20PbF Document Number 91142 www.vishay.com 2 IRFDC20PbF Document Number 91142 www.vishay.com 3 IRFDC20PbF Document Number 91142 www.vishay.com 4 IRFDC20PbF Document Number 91142 www.vishay.com 5 IRFDC20PbF Document Number 91142 www.vishay.com 6 IRFDC20PbF Document Number 91... See More ⇒
irfdc20 sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement... See More ⇒
irfdc20pbf sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement... See More ⇒
Detailed specifications: IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRF540 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 , IRFE230 , IRFE310 .
Keywords - IRFDC20 MOSFET specs
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