IRFDC20 Datasheet and Replacement
Type Designator: IRFDC20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: HD-1
IRFDC20 substitution
IRFDC20 Datasheet (PDF)
irfdc20.pdf

PD- 95914IRFDC20PbF Lead-Free10/28/04Document Number: 91142 www.vishay.com1IRFDC20PbFDocument Number: 91142 www.vishay.com2IRFDC20PbFDocument Number: 91142 www.vishay.com3IRFDC20PbFDocument Number: 91142 www.vishay.com4IRFDC20PbFDocument Number: 91142 www.vishay.com5IRFDC20PbFDocument Number: 91142 www.vishay.com6IRFDC20PbFDocument Number: 91
irfdc20 sihfdc20.pdf

IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfdc20pbf sihfdc20.pdf

IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement
Datasheet: IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 , IRF540N , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 , IRFE230 , IRFE310 .
Keywords - IRFDC20 MOSFET datasheet
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