IRFDC20 Datasheet. Specs and Replacement
Type Designator: IRFDC20 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 18 max nC
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: HD-1
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IRFDC20 substitution
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IRFDC20 datasheet
irfdc20.pdf
PD- 95914 IRFDC20PbF Lead-Free 10/28/04 Document Number 91142 www.vishay.com 1 IRFDC20PbF Document Number 91142 www.vishay.com 2 IRFDC20PbF Document Number 91142 www.vishay.com 3 IRFDC20PbF Document Number 91142 www.vishay.com 4 IRFDC20PbF Document Number 91142 www.vishay.com 5 IRFDC20PbF Document Number 91142 www.vishay.com 6 IRFDC20PbF Document Number 91... See More ⇒
irfdc20 sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement... See More ⇒
irfdc20pbf sihfdc20.pdf
IRFDC20, SiHFDC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 18 End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 8.9 Ease of Paralleling Configuration Single Simple Drive Requirement... See More ⇒
Detailed specifications: IRFD320, IRFD420, IRFD9014, IRFD9024, IRFD9110, IRFD9120, IRFD9210, IRFD9220, IRF540, IRFE024, IRFE110, IRFE120, IRFE130, IRFE210, IRFE220, IRFE230, IRFE310
Keywords - IRFDC20 MOSFET specs
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