All MOSFET. AOSP21357 Datasheet

 

AOSP21357 Datasheet and Replacement


   Type Designator: AOSP21357
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO8
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AOSP21357 Datasheet (PDF)

 ..1. Size:295K  aosemi
 aosp21357.pdf pdf_icon

AOSP21357

AOSP2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)

 7.1. Size:258K  aosemi
 aosp21321.pdf pdf_icon

AOSP21357

AOSP2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:308K  aosemi
 aosp21307.pdf pdf_icon

AOSP21357

AOSP2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHP16N50C | FDP5500

Keywords - AOSP21357 MOSFET datasheet

 AOSP21357 cross reference
 AOSP21357 equivalent finder
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