AOTF286L Datasheet. Specs and Replacement

Type Designator: AOTF286L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO220F

AOTF286L substitution

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AOTF286L datasheet

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AOTF286L

AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AOTF286L

isc N-Channel MOSFET Transistor AOTF286L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒

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AOTF286L

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒

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AOTF286L

AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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Detailed specifications: AOT2502L, AOT2904, AOT2906, AOTF190A60L, AOTF20C60P, AOTF2142L, AOTF2146L, AOTF2210L, 8N60, AOTF290L, AOTF292L, AOTF296L, AOW2502, AOW290, AOW292, AOW296, AOWF296

Keywords - AOTF286L MOSFET specs

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