AOTF286L - Даташиты. Аналоги. Основные параметры

AOTF286L80V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF286LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

isc N-Channel MOSFET Transistor AOTF288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene