AP9591GP Datasheet and Replacement
Type Designator: AP9591GP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 80 A
Qg ⓘ - Total Gate Charge: 75 nC
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 750 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO220
AP9591GP substitution
AP9591GP Datasheet (PDF)
ap9591gp.pdf
AP9591GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID -80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, r
ap9591gp-hf.pdf
AP9591GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID -80AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, r
ap9591gs.pdf
AP9591GSHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -100V Simple Drive Requirement RDS(ON) 24m Fast Switching Characteristic ID -73AG Halogen Free & RoHS Compliant ProductSDescriptionAP9591 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
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