AP9591GS MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9591GS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 73 A
Rise Time (tr): 52 nS
Drain-Source Capacitance (Cd): 750 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: TO263
AP9591GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9591GS Datasheet (PDF)
1.1. ap9591gs.pdf 
Size:208K _a-power
AP9591GS Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance D BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 24mΩ ▼ Fast Switching Characteristic ID -73A G ▼ Halogen Free & RoHS Compliant Product S Description AP9591 series are from Advanced Power innovated design and silicon process technology to achieve the lo
3.1. ap9591gp.pdf Size:196K _a-power
AP9591GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance D BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 21mΩ ▼ Fast Switching Characteristic ID -80A G ▼ Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, r
3.2. ap9591gp-hf.pdf Size:117K _a-power
AP9591GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance D BVDSS -100V Ў Simple Drive Requirement RDS(ON) 21m? Ў Fast Switching Characteristic ID -80A G Ў Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize
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