AP40T10GP Datasheet and Replacement
Type Designator: AP40T10GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 105 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 39 A
Qg ⓘ - Total Gate Charge: 24 nC
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO220
AP40T10GP substitution
AP40T10GP Datasheet (PDF)
ap40t10gp.pdf
AP40T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS Compliant & Halogen-FreeSDescriptionAP40T10 series are from Advanced Power innova
ap40t10gp-hf.pdf
AP40T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi
ap40t10gh-hf.pdf
AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru
ap40t10gr.pdf
AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
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