AP40T10GP. Аналоги и основные параметры
Наименование производителя: AP40T10GP
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 105 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A
Электрические характеристики
tr ⓘ - Время нарастания: 64 ns
Cossⓘ - Выходная емкость: 270 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO220
Аналог (замена) для AP40T10GP
- подборⓘ MOSFET транзистора по параметрам
AP40T10GP даташит
ap40t10gp.pdf
AP40T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105V D Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant & Halogen-Free S Description AP40T10 series are from Advanced Power innova
ap40t10gp-hf.pdf
AP40T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
ap40t10gh-hf.pdf
AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G D Advanced Power MOSFETs from APEC provide the designer with S TO-252(H) the best combination of fast switching, ru
ap40t10gr.pdf
AP40T10GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist
Другие MOSFET... AP98T03GS , AP75T10BGP , AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AP40T10GH , IRFB4227 , AP85T03GP , AP85T03GS , AP2761S-A , AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP , AP9974GH .
History: H10N65F | MTB028N10QNCQ8 | H10N60F | SVT068R5NT | IRLML5203PBF | 2SK3915-01MR | ME4454
History: H10N65F | MTB028N10QNCQ8 | H10N60F | SVT068R5NT | IRLML5203PBF | 2SK3915-01MR | ME4454
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Список транзисторов
Обновления
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