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AP08P20GP Specs and Replacement

Type Designator: AP08P20GP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO220

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AP08P20GP datasheet

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AP08P20GP

AP08P20GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description AP08P20 series are from Advanced Power innovated design and silicon process technology to achieve the low... See More ⇒

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AP08P20GP

AP08P20GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ... See More ⇒

Detailed specifications: AP2761S-A, AP2R803GJB, AP3987P, AP9974AGH, AP9974AGP, AP9974GH, AP9974GJ, AP9974GP, IRF9540, AP15P10GH, AP15P10GJ, AP25N10GH, AP9120GH, AP2762R-A, AP9972GH, AP15P15GH, AP20N15AGH

Keywords - AP08P20GP MOSFET specs

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