AP09N20H PDF and Equivalents Search

 

AP09N20H Specs and Replacement

Type Designator: AP09N20H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

AP09N20H substitution

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AP09N20H datasheet

 ..1. Size:238K  ape
ap09n20h.pdf pdf_icon

AP09N20H

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl... See More ⇒

 ..2. Size:216K  ape
ap09n20h j-hf.pdf pdf_icon

AP09N20H

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description Advanced Power MOSFETs from APEC provide the designer with G D S TO-252(H) the best combination of fast switching, ... See More ⇒

 7.1. Size:93K  ape
ap09n20bgh-hf.pdf pdf_icon

AP09N20H

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f... See More ⇒

 7.2. Size:230K  ape
ap09n20bgh.pdf pdf_icon

AP09N20H

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th... See More ⇒

Detailed specifications: AP9972AGP, AP9972GP, AP9972GS, AP18T20GH, AP80N03GP, AP86T02GH, AP86T02GJ, AP86T02GJB, IRF530, AP09N20J, AP70T15GI, AP02N90P, AP72T02GH, AP83T03GJ, AP95T10GI, AP04N60J, APS04N60H

Keywords - AP09N20H MOSFET specs

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