AP09N20H - описание и поиск аналогов

 

AP09N20H. Аналоги и основные параметры

Наименование производителя: AP09N20H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 69 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.6 A

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm

Тип корпуса: TO252

Аналог (замена) для AP09N20H

- подборⓘ MOSFET транзистора по параметрам

 

AP09N20H даташит

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ap09n20h.pdfpdf_icon

AP09N20H

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl

 ..2. Size:216K  ape
ap09n20h j-hf.pdfpdf_icon

AP09N20H

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description Advanced Power MOSFETs from APEC provide the designer with G D S TO-252(H) the best combination of fast switching,

 7.1. Size:93K  ape
ap09n20bgh-hf.pdfpdf_icon

AP09N20H

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f

 7.2. Size:230K  ape
ap09n20bgh.pdfpdf_icon

AP09N20H

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th

Другие MOSFET... AP9972AGP , AP9972GP , AP9972GS , AP18T20GH , AP80N03GP , AP86T02GH , AP86T02GJ , AP86T02GJB , IRF530 , AP09N20J , AP70T15GI , AP02N90P , AP72T02GH , AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H .

History: 2SK2211 | AO4407C | 2SK3047 | ME2326A | AP2325GEU6-HF | APM9904K | AP97T07AGP

 

 

 

 

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