IRFE330 Datasheet and Replacement
Type Designator: IRFE330
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35(max) nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: LCC18
IRFE330 substitution
IRFE330 Datasheet (PDF)
irfe330.pdf

PD - 91718BIRFE330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800UHEXFETTRANSISTORS JANTXV2N6800USURFACE MOUNT (LCC-18) [REF:MIL-PRF-19500/557]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE330 400V 1.0 3.0ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfacemount technology. Desinged t
irfe320.pdf

PD - 93985REPETITIVE AVALANCHE AND dv/dt RATED IRFE320HEXFETTRANSISTORS JANTX2N6792USURFACE MOUNT (LCC-18) JANTXV2N6792U[REF:MIL-PRF-19500/555] 400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE320 400V 1.8 1.8AThe leadless chip carrier (LCC) package represents theLCC-18logical next step in the continual evolution of surfacemount technology. Desinged t
irfe310.pdf

PD - 91782IRFE310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786UHEXFET TRANSISTOR JANTXV2N6786U[REF:MIL-PRF-19500/556]N - CHANNEL 400Volt, 3.6, HEXFETProduct SummaryThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE310 400V 3.6 1.25Asurface mount technology. T
Datasheet: IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 , IRFE230 , IRFE310 , IRFE320 , IRF3710 , IRFE420 , IRFE430 , IRFE9024 , IRFE9110 , IRFE9120 , IRFE9130 , IRFE9210 , IRFE9220 .
Keywords - IRFE330 MOSFET datasheet
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