All MOSFET. AP3P9R0JB Datasheet

 

AP3P9R0JB Datasheet and Replacement


   Type Designator: AP3P9R0JB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251S
 

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AP3P9R0JB Datasheet (PDF)

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AP3P9R0JB

AP3P9R0JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

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 ap3p9r0j.pdf pdf_icon

AP3P9R0JB

AP3P9R0JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and silicon GDSTO-251(J)process technology to ach

 7.1. Size:59K  ape
 ap3p9r0p.pdf pdf_icon

AP3P9R0JB

AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos

 7.2. Size:59K  ape
 ap3p9r0i.pdf pdf_icon

AP3P9R0JB

AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss

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Datasheet: AP83T03GJ , AP95T10GI , AP04N60J , APS04N60H , AP03N70H , AP03N70J , AP3P9R0H , AP3P9R0J , STP80NF70 , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I .

History: SWP11N65D | FQP6N50C

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