AP4578GH Datasheet and Replacement
Type Designator: AP4578GH
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 8.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6 A
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO252-4L
- MOSFET Cross-Reference Search
AP4578GH Datasheet (PDF)
ap4578gh.pdf

AP4578GH-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD1/D2 Good Thermal Performance RDS(ON) 72m Fast Switching Performance ID 9AS1G1 RoHS Compliant & Halogen-Free S2 P-CH BVDSS -60VG2RDS(ON) 125mTO-
ap4578gh-hf.pdf

AP4578GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD1/D2 Good Thermal Performance RDS(ON) 72m Fast Switching Performance ID 9AS1G1 RoHS Compliant S2 P-CH BVDSS -60VG2RDS(ON) 125mTO-252-4LDescription ID -6AAdvanced Power MOSFETs from APEC provide the de
ap4578gm-hf.pdf

AP4578GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD2D2D2 Lower Gate Charge D2 RDS(ON) 64mD1D1 D1D1 Fast Switching Performance ID 4.5AG2G2 RoHS Compliant P-CH BVDSS -60VS2S2G1SO-8 S1 G1RDS(ON) 125mSO-8 S1Description ID -3AAdvanced Power M
ap4578gm.pdf

AP4578GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 60V Simple Drive Requirement D2D2 RDS(ON) 64m Lower Gate Charge D1D1 ID 4.5A Fast Switching Performance G2 RoHS Compliant & Halogen-Free P-CH BVDSS -60VS2G1SO-8 S1RDS(ON
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History: AP4532GM
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History: AP4532GM



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