AP9420GM Datasheet and Replacement
Type Designator: AP9420GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 25 A
Qg ⓘ - Total Gate Charge: 33 nC
tr ⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: SO8
AP9420GM substitution
AP9420GM Datasheet (PDF)
ap9420gm.pdf
AP9420GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 3mD Fast Switching Characteristic ID 25AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9420 series are fr
ap9420gm-hf.pdf
AP9420GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 3mD Fast Switching Characteristic ID 25AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
ap9424gyt-hf.pdf
AP9424GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 6.5m RoHS Compliant & Halogen-Free ID 18AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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