AP9467GM Datasheet and Replacement
Type Designator: AP9467GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 12 A
Qg ⓘ - Total Gate Charge: 10 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SO8
AP9467GM substitution
AP9467GM Datasheet (PDF)
ap9467gm.pdf
AP9467GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11mD Fast Switching Characteristic ID 12AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9467 series are from Ad
ap9467gs.pdf
AP9467GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 11m Fast Switching Characteristics ID 52AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resista
ap9467gh.pdf
AP9467GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristics ID 52AG RoHS Compliant & Halogen-FreeSDescriptionAP9467 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest
ap9467gh-hf ap9467gj-hf.pdf
AP9467GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 11m Fast Switching Characteristics ID 52AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDru
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