AP9475GM Specs and Replacement
Type Designator: AP9475GM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 6.9
A
Electrical Characteristics
tr ⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 160
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
SO8
-
MOSFET ⓘ Cross-Reference Search
AP9475GM datasheet
..1. Size:169K ape
ap9475gm.pdf 
AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D AP9475 series are from A... See More ⇒
0.1. Size:94K ape
ap9475gm-hf.pdf 
AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa... See More ⇒
9.1. Size:217K ape
ap9476gm.pdf 
AP9476GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒
9.2. Size:69K ape
ap9477gm.pdf 
AP9477GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best co... See More ⇒
9.3. Size:126K ape
ap9477gk-hf.pdf 
AP9477GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch... See More ⇒
9.4. Size:93K ape
ap9474gm-hf.pdf 
AP9474GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D D Single Drive Requirement RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw... See More ⇒
9.5. Size:98K ape
ap9479gm-hf.pdf 
AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 45m D D Fast Switching Characteristic ID 5.6A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ... See More ⇒
9.6. Size:97K ape
ap9477gm-hf.pdf 
AP9477GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg... See More ⇒
9.7. Size:166K ape
ap9470gm.pdf 
AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9470 series are fro... See More ⇒
9.8. Size:93K ape
ap9470gm-hf.pdf 
AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒
9.9. Size:171K ape
ap9479gm.pdf 
AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS 60V Simple Drive Requirement D D RDS(ON) 45m Lower Gate Charge D D ID 5.6A Fast Switching Characteristic G RoHS Compliant & Halogen-Free S S SO-8 S Description D AP9479 series are fro... See More ⇒
9.10. Size:94K ape
ap9476gm-hf.pdf 
AP9476GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas... See More ⇒
9.11. Size:94K ape
ap9478gm.pdf 
AP9478GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 64m D D Fast Switching Characteristic ID 4.8A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin... See More ⇒
9.12. Size:92K ape
ap9474gm.pdf 
AP9474GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D Single Drive Requirement D RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design... See More ⇒
9.13. Size:812K cn vbsemi
ap9474gm.pdf 
AP9474GM www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC... See More ⇒
Detailed specifications: AP6P025M
, AP6P090M
, AP9408AGM
, AP9410AGM
, AP9434GM
, AP9467AGM
, AP9467GM
, AP9470GM
, TK10A60D
, AP9479GM
, AP9487GM
, AP9563GM
, AP9620AGM
, AP9620GM
, AP9685GM
, AP10A185M
, AP10C150M
.
History: SM3315NSQG
| ALD1102SAL
Keywords - AP9475GM MOSFET specs
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