All MOSFET. AP2C018LM Datasheet

 

AP2C018LM Datasheet and Replacement


   Type Designator: AP2C018LM
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8

 AP2C018LM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2C018LM Datasheet (PDF)

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AP2C018LM

AP2C018LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 18m D1 Fast Switching Performance ID3 8.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m Description ID3 -5.5A AP2C018L series are from Advanced ... See More ⇒

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AP2C018LM

AP2C016LMT Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Capable of 2.5V Gate Drive N-CH BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID3 12A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 32m S1 G1 S2 G2 Description ID3 -8.8A AP2C016L series are from Advanced Po... See More ⇒

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AP2C018LM

AP2C030LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 30m D1 Fast Switching Performance ID3 6.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 50m Description ID3 -5.2A AP2C030L series are from Advanced ... See More ⇒

Datasheet: AP9479GM , AP9487GM , AP9563GM , AP9620AGM , AP9620GM , AP9685GM , AP10A185M , AP10C150M , RFP50N06 , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM , AP3A010AM , AP3B026M , AP3C010M .

History: 40600 | AP36016M | IRF1324L

Keywords - AP2C018LM MOSFET datasheet

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