AP2C018LM Datasheet. Specs and Replacement

Type Designator: AP2C018LM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

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AP2C018LM datasheet

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AP2C018LM

AP2C018LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 18m D1 Fast Switching Performance ID3 8.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m Description ID3 -5.5A AP2C018L series are from Advanced ... See More ⇒

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AP2C018LM

AP2C016LMT Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Capable of 2.5V Gate Drive N-CH BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID3 12A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 32m S1 G1 S2 G2 Description ID3 -8.8A AP2C016L series are from Advanced Po... See More ⇒

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AP2C018LM

AP2C030LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 30m D1 Fast Switching Performance ID3 6.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 50m Description ID3 -5.2A AP2C030L series are from Advanced ... See More ⇒

Detailed specifications: AP9479GM, AP9487GM, AP9563GM, AP9620AGM, AP9620GM, AP9685GM, AP10A185M, AP10C150M, RFP50N06, AP2C030LM, AP2P028EM, AP36016M, AP3700M, AP38028EM, AP3A010AM, AP3B026M, AP3C010M

Keywords - AP2C018LM MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs