AP2C030LM Datasheet. Specs and Replacement
Type Designator: AP2C030LM 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
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AP2C030LM substitution
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AP2C030LM datasheet
ap2c030lm.pdf
AP2C030LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 30m D1 Fast Switching Performance ID3 6.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 50m Description ID3 -5.2A AP2C030L series are from Advanced ... See More ⇒
ap2c016lmt.pdf
AP2C016LMT Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 D1 D2 D2 Capable of 2.5V Gate Drive N-CH BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID3 12A RoHS Compliant & Halogen-Free P-CH BVDSS -20V RDS(ON) 32m S1 G1 S2 G2 Description ID3 -8.8A AP2C016L series are from Advanced Po... See More ⇒
ap2c018lm.pdf
AP2C018LM Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive N-CH BVDSS 20V D2 D2 Low Gate Charge D1 RDS(ON) 18m D1 Fast Switching Performance ID3 8.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m Description ID3 -5.5A AP2C018L series are from Advanced ... See More ⇒
Detailed specifications: AP9487GM, AP9563GM, AP9620AGM, AP9620GM, AP9685GM, AP10A185M, AP10C150M, AP2C018LM, SI2302, AP2P028EM, AP36016M, AP3700M, AP38028EM, AP3A010AM, AP3B026M, AP3C010M, AP4224LGM
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