AP4503AGEM MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4503AGEM
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7 A
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SO8
AP4503AGEM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4503AGEM Datasheet (PDF)
ap4503agem.pdf
AP4503AGEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Lower Gate Charge RDS(ON) 26mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON)
ap4503agem-hf.pdf
AP4503AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Lower Gate Charge RDS(ON) 26mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 52mDescription ID -5AAP4503A series are from Advanced Po
ap4503agm-hf.pdf
AP4503AGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 6.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC p
ap4503bgo-hf.pdf
AP4503BGO-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement G2 N-CH BVDSS 30VS2S2D2 Lower Gate Charge RDS(ON) 23mG1 Fast Switching Performance S1 ID 6.3AS1TSSOP-8 D1 RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 35mDescription ID -5.2AAdvanced Power MOSFETs from APEC
ap4503bgm-hf.pdf
AP4503BGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Lower Gate Charge D1 RDS(ON) 18mD1 Fast Switching Performance ID 8.2AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 29mDescription ID -6.6AAdvanced Power MOSFETs from APEC p
ap4503gm.pdf
AP4503GMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 6.9AG2S2P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best
ap4503gm-hf.pdf
AP4503GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 6.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC p
ap4503gm.pdf
AP4503GMwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS
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