AP4963GEM Datasheet. Specs and Replacement

Type Designator: AP4963GEM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SO8

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AP4963GEM datasheet

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AP4963GEM

AP4963GEM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Lower Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID -6A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description AP4963 series are from Advanced Power innovated design D1 D2 and silicon proce... See More ⇒

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AP4963GEM

AP4963GEM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Lower Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID -6A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description D1 D2 Advanced Power MOSFETs from APEC provide the G1 G2 designer with the b... See More ⇒

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 ap4961gm.pdf pdf_icon

AP4963GEM

AP4961GM RoHS-compliant Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Lower On-resistance BVDSS -20V D2 D1 Simple Drive Requirement RDS(ON) 28m D1 Dual P MOSFET Package ID -7A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedize... See More ⇒

Detailed specifications: AP4506GEM, AP4509GM, AP4511GM, AP4513GM, AP4525GEM, AP4532GM, AP4533GEM, AP4578GM, IRF830, AP5322GM, AP6A100M, AP6C036M, AP6C072M, AP8N010LM, AP9926GM, AP9936GM, AP9938GEM

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