AP4963GEM Datasheet and Replacement
Type Designator: AP4963GEM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SO8
AP4963GEM Datasheet (PDF)
ap4963gem.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4963 series are from Advanced Power innovated design D1 D2and silicon proce
ap4963gem-hf.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1 G2designer with the b
ap4961gm.pdf

AP4961GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Lower On-resistance BVDSS -20VD2D1 Simple Drive Requirement RDS(ON) 28mD1 Dual P MOSFET Package ID -7AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize
Datasheet: AP4506GEM , AP4509GM , AP4511GM , AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , IRF1405 , AP5322GM , AP6A100M , AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM .
History: AP70SL1K4BJB
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History: AP70SL1K4BJB



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