AP4963GEM Datasheet and Replacement
Type Designator: AP4963GEM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SO8
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AP4963GEM Datasheet (PDF)
ap4963gem.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4963 series are from Advanced Power innovated design D1 D2and silicon proce
ap4963gem-hf.pdf

AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1 G2designer with the b
ap4961gm.pdf

AP4961GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Lower On-resistance BVDSS -20VD2D1 Simple Drive Requirement RDS(ON) 28mD1 Dual P MOSFET Package ID -7AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP4543GEH-HF | AP4533GEH-HF | AP4N2R6J | AP4957AGM | AP4C205Y | AP4835GM
Keywords - AP4963GEM MOSFET datasheet
AP4963GEM cross reference
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History: AP4543GEH-HF | AP4533GEH-HF | AP4N2R6J | AP4957AGM | AP4C205Y | AP4835GM



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