AP4963GEM MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4963GEM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6 A
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SO8
AP4963GEM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4963GEM Datasheet (PDF)
ap4963gem.pdf
AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4963 series are from Advanced Power innovated design D1 D2and silicon proce
ap4963gem-hf.pdf
AP4963GEM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Lower Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID -6AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1 G2designer with the b
ap4961gm.pdf
AP4961GMRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Lower On-resistance BVDSS -20VD2D1 Simple Drive Requirement RDS(ON) 28mD1 Dual P MOSFET Package ID -7AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedize
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