AP4963GEM Datasheet and Replacement
Type Designator: AP4963GEM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SO8
AP4963GEM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4963GEM Datasheet (PDF)
ap4963gem.pdf
AP4963GEM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Lower Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID -6A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description AP4963 series are from Advanced Power innovated design D1 D2 and silicon proce... See More ⇒
ap4963gem-hf.pdf
AP4963GEM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Lower Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID -6A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description D1 D2 Advanced Power MOSFETs from APEC provide the G1 G2 designer with the b... See More ⇒
ap4961gm.pdf
AP4961GM RoHS-compliant Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Lower On-resistance BVDSS -20V D2 D1 Simple Drive Requirement RDS(ON) 28m D1 Dual P MOSFET Package ID -7A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedize... See More ⇒
Datasheet: AP4506GEM , AP4509GM , AP4511GM , AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , IRF830 , AP5322GM , AP6A100M , AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM .
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