All MOSFET. AP5322GM Datasheet

 

AP5322GM Datasheet and Replacement


   Type Designator: AP5322GM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SO8
 

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AP5322GM Datasheet (PDF)

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AP5322GM

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1AP5322 series are from Advanced Power innovated designand silico

 0.1. Size:96K  ape
 ap5322gm-hf.pdf pdf_icon

AP5322GM

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe be

 9.1. Size:94K  ape
 ap5321gm-hf.pdf pdf_icon

AP5322GM

AP5321GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 150m Fast Switching Characteristic ID 2.5A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination

Datasheet: AP4509GM , AP4511GM , AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , 60N06 , AP6A100M , AP6C036M , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM .

History: IRFSL3107PBF | AON6206

Keywords - AP5322GM MOSFET datasheet

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