AP5322GM Datasheet and Replacement
Type Designator: AP5322GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Qgⓘ - Total Gate Charge: 3.1 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SO8
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AP5322GM Datasheet (PDF)
ap5322gm.pdf

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1AP5322 series are from Advanced Power innovated designand silico
ap5322gm-hf.pdf

AP5322GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100VD2D2D1 Simple Drive Requirement RDS(ON) 250mD1 Fast Switching Characteristic ID 1.9AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe be
ap5321gm-hf.pdf

AP5321GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 150m Fast Switching Characteristic ID 2.5A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STV250N55F3 | AP55T06GI-HF | CEP02N65A | AP4525GEM | AP4563GM
Keywords - AP5322GM MOSFET datasheet
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History: STV250N55F3 | AP55T06GI-HF | CEP02N65A | AP4525GEM | AP4563GM



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