AP5322GM Datasheet. Specs and Replacement

Type Designator: AP5322GM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SO8

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AP5322GM datasheet

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AP5322GM

AP5322GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V D2 D2 D1 Simple Drive Requirement RDS(ON) 250m D1 Fast Switching Characteristic ID 1.9A G2 S2 Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 AP5322 series are from Advanced Power innovated design and silico... See More ⇒

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ap5322gm-hf.pdf pdf_icon

AP5322GM

AP5322GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V D2 D2 D1 Simple Drive Requirement RDS(ON) 250m D1 Fast Switching Characteristic ID 1.9A G2 S2 Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the be... See More ⇒

 9.1. Size:94K  ape
ap5321gm-hf.pdf pdf_icon

AP5322GM

AP5321GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 150m Fast Switching Characteristic ID 2.5A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination ... See More ⇒

Detailed specifications: AP4509GM, AP4511GM, AP4513GM, AP4525GEM, AP4532GM, AP4533GEM, AP4578GM, AP4963GEM, IRLB3034, AP6A100M, AP6C036M, AP6C072M, AP8N010LM, AP9926GM, AP9936GM, AP9938GEM, AP9960GM

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