All MOSFET. AP6C072M Datasheet

 

AP6C072M Datasheet and Replacement


   Type Designator: AP6C072M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SO8
 

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AP6C072M Datasheet (PDF)

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AP6C072M

AP6C072MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD2D2 Low Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID 5.4AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S1SO-8RDS(ON) 72mDescription ID -3.9AAP6C072 series are from Advanced Power

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 ap6c036h.pdf pdf_icon

AP6C072M

AP6C036HHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID3 12AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S2RDS(ON) 75mG2Description ID3 -12ATO-252-4LAdvanced Power MOSFETs from APEC

 9.2. Size:254K  ape
 ap6c036m.pdf pdf_icon

AP6C072M

AP6C036MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60VD2D2 Low Gate Charge D1 RDS(ON) 36mD1 Fast Switching Performance ID3 6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60VG1S1SO-8RDS(ON) 72mDescription ID3 -4.2AAP6C036 series are from Advanced Power

Datasheet: AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , AP5322GM , AP6A100M , AP6C036M , AON7403 , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM , AP9971AGM , AP9971GM .

History: IRF541FI | IRF9151 | HY3003P | RU15P12C | AP60P20Q | STD25NF10 | 2SK2677

Keywords - AP6C072M MOSFET datasheet

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